Improved Drain Current Characteristics of HfO2/SiO2 Dual Material Dual Gate Extension on Drain Side-TFET
B Balaji, K Srinivasa Rao, K Girija Sravani… - Silicon, 2022 - Springer
Abstract We Proposed Dual Material Dual Gate Extension on Drain side TFET (DMDGED-
TFET) and have analyzed, confirmed Performance characteristics in 10 nm technology. The …
TFET) and have analyzed, confirmed Performance characteristics in 10 nm technology. The …
Design and qualitative analysis of hetero dielectric tunnel field effect transistor device
S Howldar, B Balaji, K Srinivasa Rao - International Journal of Engineering, 2023 - ije.ir
A Hetero Dielectric Tunnel field effect transistor with the spacer on both sides of the gate is
proposed in this paper. The performance and characteristics of Hetero Dielectric Tunnel field …
proposed in this paper. The performance and characteristics of Hetero Dielectric Tunnel field …
Performance analysis and optimization of asymmetric front and back pi gates with dual material in gallium nitride high electron mobility transistor for nano electronics …
Y Gowthami, B Balaji, K Srinivasa Rao - International Journal of Engineering, 2023 - ije.ir
The impact of aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi
Gate (FG) and Back Pi Gate (BG), Dual Floating material High K dielectric material such as …
Gate (FG) and Back Pi Gate (BG), Dual Floating material High K dielectric material such as …
[PDF][PDF] Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor.
Y Gowthami, B Balaji, KS Rao - International Journal of Electrical & …, 2023 - academia.edu
Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon
nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The …
nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The …
Device Design and Modeling of Fin Field Effect Transistor for Low Power Applications
U Soma, E Suresh, B Balaji, B Ramadevi - … of 5th ICICC 2021, Volume 2, 2022 - Springer
Fin field effect transistor (FinFET) is the newest technology compared to metal oxide
semiconductor field effect transistors (FET), and we designed various structures of FinFETs …
semiconductor field effect transistors (FET), and we designed various structures of FinFETs …