The simulation of tunnel junctions is performed by using nonlocal band-to-band and trap
assisted tunneling models that are capable of reproducing the experimental current-voltage …

The key characteristics of quantum dot (QD)-enhanced multijunction solar cells (MJSC) are
explored theoretically by focusing on the generation and recombination rates throughout the …

Modeling single junction solar cells composed of III–V semiconductors such as GaAs with
the effects of photon recycling yields insight into design and material criteria required for …

This work investigates the temperature dependence of the performance of In (Ga) As-based
solar cells made from sub-monolayer (SML) quantum dots (QDs), quantum wells (QWs), and …

The performance improvements of adding InAs quantum dots (QDs) in the middle subcell of
a lattice matched triple-junction InGaP/InGaAs/Ge photovoltaic device are studied using the …

Strong luminescent coupling (LC) effect reduces current mismatch in III-V-based
multijunction solar cells and consequently improves their power conversion efficiency. The …

Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such
as GaAs can exploit the effects of photon recycling to achieve record-high open circuit …

The positioning of InAs quantum dot (QD) layers in a triple‐junction GaInP/Ga (In) As/Ge
solar cell is studied using numerical modeling techniques. An effective medium is used to …

The key performance metrics of quantum-dot (QD)-lattice-matched multijunction solar cells
(MJSCs) composed of InGaP/(In) GaAs/Ge with InAs/GaAs QDs are explored under high …

With silicon-based tandem solar cells nearing commercialization, the significance of
predicting the outdoor performance of tandem solar devices is growing. Although several …