Transport in two-dimensional topological materials: recent developments in experiment and theory
We review theoretical and experimental highlights in transport in two-dimensional
topological materials over the last five years. Topological materials comprise topological …
topological materials over the last five years. Topological materials comprise topological …
Quantum interference and Aharonov–Bohm oscillations in topological insulators
JH Bardarson, JE Moore - Reports on Progress in Physics, 2013 - iopscience.iop.org
Topological insulators (TIs) have an insulating bulk but a metallic surface. In the simplest
case, the surface electronic structure of a three-dimensional (3D) TI is described by a single …
case, the surface electronic structure of a three-dimensional (3D) TI is described by a single …
Topological insulator materials
Y Ando - Journal of the Physical Society of Japan, 2013 - journals.jps.jp
Topological insulators represent a new quantum state of matter which is characterized by
peculiar edge or surface states that show up due to a topological character of the bulk wave …
peculiar edge or surface states that show up due to a topological character of the bulk wave …
Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead
to unique electronic properties,,,,,,,,, with potential applications in spintronics and quantum …
to unique electronic properties,,,,,,,,, with potential applications in spintronics and quantum …
Manifestation of Topological Protection in Transport Properties of Epitaxial Thin Films
The massless Dirac fermions residing on the surface of three-dimensional topological
insulators are protected from backscattering and cannot be localized by disorder, but such …
insulators are protected from backscattering and cannot be localized by disorder, but such …
Thickness-Independent Transport Channels in Topological Insulator Thin Films
With high quality topological insulator Bi 2 Se 3 thin films, we report thickness-independent
transport properties over wide thickness ranges. Conductance remained nominally constant …
transport properties over wide thickness ranges. Conductance remained nominally constant …
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator BiSe
We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
We study coherent electronic transport in charge-density-tunable microdevices patterned
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …
Measure of genuine multipartite entanglement with computable lower bounds
ZH Ma, ZH Chen, JL Chen, C Spengler, A Gabriel… - Physical Review A …, 2011 - APS
We introduce an intuitive measure of genuine multipartite entanglement, which is based on
the well-known concurrence. We show how lower bounds on this measure can be derived …
the well-known concurrence. We show how lower bounds on this measure can be derived …
Weak localization of bulk channels in topological insulator thin films
Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering
comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very …
comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very …