Light-emitting diodes (LEDs) are devices designed to efficiently convert electrical energy
into electromagnetic radiation, most of which is visible to the human eye. Some of the …

Publisher Summary This chapter discusses the theory of photoluminescence. The
semiclassical formalism is retained but modified to include spontaneous emission in a …

A doubly ionizable acceptor (binding energies of EA= 34.5 meV, EC= 102 meV), which is
responsible for the hole concentration in undoped GaSb, is identified by photoluminescence …

Binding energies, interparticle distances, oscillator strengths, and exchange corrections are
calculated for the three-particle complex corresponding to an exciton bound to an ionized …

Low‐temperature photoluminescence spectra are presented for Si crystals which have been
irradiated with high‐energy electrons. Studies of isochronal annealing, stress effects, and …

After a brief description of the essential characteristics of isoelectronic traps, this review is
mainly concerned with new experimental information on this important class of …

抄録< jats: title> Abstract</jats: title>< jats: p> It is shown that the excitonic ion should be
stable for any value of the electron to hole effective mass ratio u. An accurate calculation of …

Undoped single crystals of 6 H SiC often exhibit two series of luminescence lines, sharp at
low temperature, in good quality strain-free crystals. A high-energy series, in the violet close …

The effect of an uniaxial stress on the impurity and exciton lines is studied. The deformation
potentials are determined. The analysis of the uniaxial-stress data shows that the residual …

Luminescence in irradiated silicon consists of a spectral group between 0.80 eV and 1.0 eV
which seems to be independent of impurities while a lower energy group between 0.60 eV …