A high-efficiency power-combining method for four-way 5.8-GHz magnetrons based on the
external injection-locking technique is presented in this article. The method uses a …

Full-duplex (FD) enables high spectrum efficiency and dynamic spectrum accessing,
although its application is restricted by significant self-interference. In this work, we present …

This brief presents a 30–36 GHz CMOS power amplifier (PA) with a diode-connected analog
linearizer dedicated to improving the output power and power-added efficiency (PAE) at 1 …

This paper presents Doherty power amplifier (DPA) based on gallium nitride (GaN)
technology, incorporating a parallel grounded network with series RC elements in front of …

This paper presents a fully integrated linear power amplifier (PA) in a 65-nm CMOS process
for mm-wave 5G applications. The proposed linear PA employs a compact symmetrical 4 …

This article presents a dual-band power amplifier for 28 and 39 GHz frequency bands based
on a new dual-path transformer (DPT). This DPT can provide two optimum inductive values …

This paper presents a 4-path series-parallel combined highly-efficient class-AB power
amplifier (PA) with broad bandwidth and low AM-PM distortion in CMOS process. Frequency …

This letter presents a novel load-modulation-based 3rd-order intermodulation distortion
(IMD3) cancellation technique for class-B CMOS power amplifiers (PAs). In a class-B PA, the …

This paper presents a Ka-band 4-way combining power amplifier (PA) implemented in 65
nm CMOS process. A T-type power combiner with loaded capacitors is proposed, which is …

Industrial Revolution 4.0 (IR 4.0) has always been a hot topic to be discussed along with the
Internet of Things (IoT). With current 5G wireless technology, IoT systems are able to be …