Wavelength shift during the period of direct modulation (dynamic wavelength shift) for
injection lasers having a BH structure has been investigated both experimentally and …

The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …

Crystal growth techniques for the metal chloride-hydride vapor-phase epitaxy of InGaAsP
alloys are described. The growth conditions and gas flows for alloys with energy bandgap …

Injection of hydrogen chloride into the growth region is found to be very effective in
suppressing the extraneous wall deposition, which frequently occurs in hydride vapor phase …

CW operation at up to 60? C at 1.65? m has been achieved in MBE-grown InGaAs/InP
buried-heterostructure lasers with LPE InP burying layers. Threshold current was as low as …

The electrical properties of In 1-x Ga x As y P 1-y alloys lattice matched to InP, grown by
liquid-phase and vapor-phase epitaxial techniques, have been determined by various …

CW operation of InGaAs/InP DH lasers grown by molecular beam epitaxy has been
achieved at a heat sink temperature of 6 C at a wavelength of 1.70 µm. This result was …

Room temperature pulsed operation has been achieved in the 1.2? 1.3? m region for
GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds …

1.6 μm wavelength GaInAsP/InP buried heterostructure (BH) lasers were fabricated by the
LPE technique using an antimeltback layer. A new fabrication process was used in order to …

Reduction of the threshold current of GaInAsP lasers with an antimeltback layer was studied
in the wavelength range 1.50-1.65\mu n. The two-phase solution growth technique was …