The aim of this study is to investigate the effects of operating parameters on the specific
energy consumption and removal efficiency of synthetic wastewater containing indium (III) …

Indium and its compounds exhibit excellent semiconductor properties however they are
suspected carcinogenic to human beings. For the first time, we applied nanofiltration (NF) …

Indium and its compounds have numerous industrial applications in the manufacture of
liquid crystal displays and semiconductors. They are considered hazardous substances …

This paper reports the low temperature photoluminescence (PL) characteristics of GaAsN
grown by radio frequency nitrogen plasma-assisted solid source molecular beam epitaxy. It …

It is demonstrated that a nitrogen supply, manifested as both a direct nitrogen beam from a rf-
activated plasma source and dispersive nitrogen radicals from the growth-chamber …

GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions
and ex-situ annealing processes. Annealing could drastically increase the optical quality of …

It is demonstrated that a nitrogen supply, manifested as both a direct nitrogen beam from a rf-
activated plasma source and dispersive nitrogen radicals from the growth-chamber …

GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing
processes. The critical thickness is almost one order thicker than the theoretical prediction …

In this article, we report an attempt of extending the InGaAsN materials towards 1.3 µm and
1.55 µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid …

Ga (In) AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or
dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The …