Cycle endurance and failure in ITO/MEH-PPV/Al resistive switching devices
MMF de Azevedo, GSM de Araújo, JA Osajima… - Sensors and Actuators A …, 2024 - Elsevier
Improving resistive memory reliability requires understanding some bottlenecks, ie, control
and stability of the memory parameters during endurance cycling and physical degradation …
and stability of the memory parameters during endurance cycling and physical degradation …