O Gubanova, A Poletaev, N Komarova… - Materials Science in …, 2024 - Elsevier
This paper describes a novel design of ISFET, which uses a hafnium oxide-coated aluminum pad surface as a floating/extended gate. The design was realized using standard …
M Douthwaite, E Koutsos, DC Yates… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
Recent advances in electronics and electrochemical sensors have led to an emerging class of next generation wearables, detecting analytes in biofluids such as perspiration. Most of …
M Cacho-Soblechero… - … Circuits and Systems, 2020 - ieeexplore.ieee.org
This paper presents a 32× 32 ISFET array with inpixel dual-sensing and programmability targeted for on-chip DNA amplification detection. The pixel architecture provides thermal …
Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) …
We present a model that can be used to compute the charging and potential at any point of the electrochemical system comprising the ion-sensitive floating gate FET (ISFGFET) …
The ion-sensitive field-effect transistor (ISFET) is a type of electrochemical sensor with a wide range of applications. They offer advantages of being compatible with standard CMOS …
M Sohbati, C Toumazou - IEEE Sensors Journal, 2014 - ieeexplore.ieee.org
In this paper, the ion-sensitive field-effect transistor (ISFET) performance in unmodified complementary metal-oxide-semiconductor is thoroughly studied in terms of …
This paper demonstrates and compares three configurations for ISFET arrays fabricated in unmodified CMOS that facilitate chemical imaging with linear pH-to-output conversion …
Reduction of drift in Complementary Metal Oxide-Semiconductor (CMOS) Ion-Sensitive Field- Effect Transistor (ISFET) pH sensors is demonstrated using monolayer and multilayer …