What remains unexplained about the properties of halide perovskites?
The notion that halide perovskite crystals (ABX3, where X is a halide) exhibit unique
structural and optoelectronic behavior deserves serious scrutiny. After decades of steady …
structural and optoelectronic behavior deserves serious scrutiny. After decades of steady …
Laser processing for thin film chalcogenide photovoltaics: a review and prospectus
BJ Simonds, HJ Meadows, S Misra… - … of Photonics for …, 2015 - spiedigitallibrary.org
We review prior and on-going works in using laser annealing (LA) techniques in the
development of chalcogenide-based [CdTe and Cu (In, Ga)(S, Se) 2] solar cells. LA can …
development of chalcogenide-based [CdTe and Cu (In, Ga)(S, Se) 2] solar cells. LA can …
Thermodynamics and kinetics of the copper vacancy in CuInSe2, CuGaSe2, CuInS2, and CuGaS2 from screened-exchange hybrid density functional theory
Formation enthalpies and migration barriers of the copper vacancy in CuInSe 2, CuGaSe 2
2, CuInS 2, and CuGaS 2 are calculated by means of density functional theory with a …
2, CuInS 2, and CuGaS 2 are calculated by means of density functional theory with a …
Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors
J Wang, H Ning, J Wang, SV Kershaw… - ACS Applied Nano …, 2022 - ACS Publications
Semiconductor quantum dots (QDs) are promising materials for stress/strain sensing
applications owing to their pressure-dependent photoluminescence (PL) and nanoscale …
applications owing to their pressure-dependent photoluminescence (PL) and nanoscale …
Bulk modulus and microhardness of tetrahedral semiconductors
Using the plasma oscillations theory of solids, simple relations have been proposed for the
calculation of bulk modulus (B) and microhardness (H) of group IV, II–VI, III–V, I–III–VI2 and II …
calculation of bulk modulus (B) and microhardness (H) of group IV, II–VI, III–V, I–III–VI2 and II …
First-principles study of point defects in solar cell semiconductor CuInS2
H Chen, CY Wang, JT Wang, XP Hu… - Journal of Applied …, 2012 - pubs.aip.org
The formation energies and transition levels of point defects V Cu, V In, VS, In Cu, Cu In,
and OS in CuInS 2 are studied using the hybrid density functional theory. It is found that the …
and OS in CuInS 2 are studied using the hybrid density functional theory. It is found that the …
Trends in band-gap pressure coefficients in chalcopyrite semiconductors
We present the results of a first-principles calculation of the direct band-gap pressure
coefficient ag for a series of Ga and In semiconductor compounds with both the chalcopyrite …
coefficient ag for a series of Ga and In semiconductor compounds with both the chalcopyrite …
High-Pressure Structural Transformation Pathway and Electronic Properties of AgGaTe2: Ab Initio Evolutionary Structural Searching
We have used systematic ab initio evolutionary structural searching to uncover the high-
pressure transformation pathway of a promising thermoelectric material, AgGaTe2. The …
pressure transformation pathway of a promising thermoelectric material, AgGaTe2. The …
Dynamical and anisotropic behavior of the MSiP2 (M= Be, Mg, Cd, Zn and Hg) compounds
T Ouahrani, YÖ Çiftci, M Mebrouki - Journal of alloys and compounds, 2014 - Elsevier
Intensive calculations in the framework of the density functional theory (DFT) scheme have
been carried out in order to predict accurately the elastic behavior and the equilibrium …
been carried out in order to predict accurately the elastic behavior and the equilibrium …
Sudden stress relaxation in compound semiconductor thin films triggered by secondary phase segregation
R Mainz, H Rodriguez-Alvarez, M Klaus, D Thomas… - Physical Review B, 2015 - APS
In polycrystalline compound semiconductor thin films, structural defects such as grain
boundaries as well as lateral stress can form during film growth, which may deteriorate their …
boundaries as well as lateral stress can form during film growth, which may deteriorate their …