A review of experimental and computational advances in thermal boundary conductance and nanoscale thermal transport across solid interfaces

A Giri, PE Hopkins - Advanced Functional Materials, 2020 - Wiley Online Library
Interfacial thermal resistance is the primary impediment to heat flow in materials and devices
as characteristic lengths become comparable to the mean‐free paths of the energy carriers …

Ultrafast and nanoscale energy transduction mechanisms and coupled thermal transport across interfaces

A Giri, SG Walton, J Tomko, N Bhatt, MJ Johnson… - ACS …, 2023 - ACS Publications
The coupled interactions among the fundamental carriers of charge, heat, and
electromagnetic fields at interfaces and boundaries give rise to energetic processes that …

Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks

AM Evans, A Giri, VK Sangwan, S Xun, M Bartnof… - Nature materials, 2021 - nature.com
As the features of microprocessors are miniaturized, low-dielectric-constant (low-k) materials
are necessary to limit electronic crosstalk, charge build-up, and signal propagation delay …

Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing

Y Jang, J Park, J Kang, SY Lee - ACS Applied Electronic Materials, 2022 - ACS Publications
Brain-inspired neuromorphic computing emulates the biological functions of the human
brain to achieve highly intensive data processing with low power consumption. In particular …

High thermal conductivity of submicrometer aluminum nitride thin films sputter-deposited at low temperature

C Perez, AJ McLeod, ME Chen, S Yi, S Vaziri, R Hood… - ACS …, 2023 - ACS Publications
Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent
thermal conductivity, but high-quality films typically require exceedingly hot deposition …

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai… - Nature …, 2021 - nature.com
Phase change memory (PCM) is a rapidly growing technology that not only offers
advancements in storage-class memories but also enables in-memory data processing to …

Electrical resistance of the current collector controls lithium morphology

ST Oyakhire, W Zhang, A Shin, R Xu, DT Boyle… - Nature …, 2022 - nature.com
The electrodeposition of low surface area lithium is critical to successful adoption of lithium
metal batteries. Here, we discover the dependence of lithium metal morphology on electrical …

[HTML][HTML] Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

RL Xu, M Muñoz Rojo, SM Islam, A Sood… - Journal of Applied …, 2019 - pubs.aip.org
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet
photonics, where an understanding of its thermal properties is essential. Here, we measure …

[HTML][HTML] Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films …

EA Scott, JT Gaskins, SW King, PE Hopkins - APL Materials, 2018 - pubs.aip.org
The need for increased control of layer thickness and uniformity as device dimensions shrink
has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to …

[HTML][HTML] Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation

J Strand, P La Torraca, A Padovani, L Larcher… - Journal of Applied …, 2022 - pubs.aip.org
We use a multi-scale modeling to study the time-dependent dielectric breakdown of an
amorphous (a-) HfO 2 insulator in a metal–oxide–metal capacitor. We focus on the role …