III-nitride nanowires for solar light harvesting: A review
The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …
Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy
p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …
Ultraviolet-C photodetector fabricated using Si-doped n-AlGaN nanorods grown by MOCVD
Aluminum gallium nitride (Al x Ga1–x N) alloy films and nanostructures have attracted
extensive research attention for ultraviolet (UV) and deep ultraviolet optoelectronic …
extensive research attention for ultraviolet (UV) and deep ultraviolet optoelectronic …
Theoretical prediction of a graphene-like structure of indium nitride: A promising excellent material for optoelectronics
Indium nitride is a very important solid state light material. Here we theoretically predict a
planar graphene-like structure namely g-InN monolayer. We investigate its the mechanical …
planar graphene-like structure namely g-InN monolayer. We investigate its the mechanical …
Ab initio calculations and experimental study of piezoelectric YxIn1− xN thin films deposited using reactive magnetron sputter epitaxy
By combining theoretical prediction and experimental verification we investigate the
piezoelectric properties of yttrium indium nitride (Y x In 1− x N). Ab initio calculations show …
piezoelectric properties of yttrium indium nitride (Y x In 1− x N). Ab initio calculations show …
First principles study on the spin unrestricted electronic structure properties of transition metal doped InN nanoribbons
S Caliskan, F Hazar - Superlattices and Microstructures, 2015 - Elsevier
In the present study, first principles calculations were carried out to reveal the spin
unrestricted electronic structure behavior of both pure and transition metal (TM) atom (V and …
unrestricted electronic structure behavior of both pure and transition metal (TM) atom (V and …
Overcoming the challenges associated with the InN/InGaN heterostructure via a nanostructuring approach for broad band photodetection
One-dimensional nanostructures such as nanorods (NRs) and nanowires have garnered
great interest, making them prospective candidates for the development of next-generation …
great interest, making them prospective candidates for the development of next-generation …
Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal–Organic Vapor Phase Epitaxy
C Tessarek, S Fladischer, C Dieker, G Sarau… - Nano Letters, 2016 - ACS Publications
Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal–
organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the …
organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the …
Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting
J Kamimura, P Bogdanoff, M Ramsteiner… - Semiconductor …, 2016 - iopscience.iop.org
InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …
Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ~ 630 nm)
We present a physical model for recently demonstrated high indium content self-assembled
In_0. 4Ga_0. 6N/GaN quantum dot (QD)-based ridge-waveguide lasers emitting at red …
In_0. 4Ga_0. 6N/GaN quantum dot (QD)-based ridge-waveguide lasers emitting at red …