Penalty and barrier-based numerical optimization for efficiency and power density of interleaved buck/boost converter

X Ma, P Wang, Y Wang, L Tao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
To achieve the global optimization of efficiency and power density of interleaved buck/boost
converter (IBBC) for transportation electrification, a numerical optimization method is …

Review of resonant gate driver from the perspective of driving energy and time

H Peng, H Peng, Q Tong, X Ding… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Resonant gate driver (RGD) is a premium solution for driving power transistors in high-
frequency and high-power-density applications, with the merits of much less power loss and …

A novel isolated resonant gate driver with adjustable duty ratio for SiC MOSFET

Q Yue, H Peng, Q Tong, Y Kang - IEEE Journal of Emerging …, 2022 - ieeexplore.ieee.org
Resonant gate driver is a promising technique to save gate driver loss at high switching
frequencies to further promote the integration level of gate driver with power modules. State …

A multi‐objective optimization approach for modeling and analyzing the impact of drive parameters in SiC power converters

X Liu, B Liu, S He, R Ma, L Diao - International Journal of …, 2024 - Wiley Online Library
This paper introduces an equivalent model including the parasitic parameters analysis of
silicon carbide (SiC) MOSFETs in order to enhance their performance for high‐power …

Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress

H Qin, Z Ba, S Xie, Z Zhang, W Chen, Q Xun - Micromachines, 2023 - mdpi.com
In conventional parameters design, the driving circuit is usually simplified as an RLC second-
order circuit, and the switching characteristics are optimized by selecting parameters, but the …

Etude et conception d'un «Intelligent Power Module (IPM)» forte puissance en technologie SiC: développement du Gâte Driver

A Laspeyres - 2023 - theses.hal.science
L'aéronautique tend à hybrider la propulsion et à électrifier de plus en plus de fonctions.
Ceci entraîne une augmentation de la tension du réseau de bord HVDC afin de répondre à …

A Load Adaptive Intelligent IGBT Gate Drive

G Zhang, BJ Zhang, S Shao… - 2023 11th International …, 2023 - ieeexplore.ieee.org
Insulated gate bipolar transistor (IGBT) is widely used in high power electronics converters
as the key devices. The reliability and efficiency of converters are highly related to the IGBTs …

Influence of Driving Circuit Parameters and Layout Compactness on the Optimum Selection of Gate-Source Voltage Test Point for SiC MOSFETs

H Qin, S Xie, W Chen, F Bu, J Peng… - … Conference on Power …, 2022 - ieeexplore.ieee.org
Accurate measurement of the gate-source voltage for silicon carbide (SiC) MOSFET is an
essential prerequisite for correctly evaluating the reliability of driving circuit. Due to the high …