Усовершенствован способ фор-мирования пористого арсенида галлия в растворе
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …

In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …

We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF,
and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best …

Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …

In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …

Porous GaAs were formed by electrochemical etching of n-type GaAs (1 0 0) substrates
implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8× 10+ 13 Fe++/cm …

Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …

Porous GaAs layers have been prepared by electrochemical etching of p+-type GaAs (10 0)
surfaces in two different solutions; HCl: H 2 O 2: H 2 O (HF free electrolyte) and HCl: H 2 O 2 …

Elektrokimyasal aşındırma yöntemi ile altıgen çubuklar, mikro kristaller, homojen gözenekli
yapılar ve mikro yarık yapıları olmak üzere çeşitli üç boyutlu mikro ve nano yüzeyler n ve p …

In this paper, we present the results of structural and room temperature photoluminescence
studies on porous GaAs (π-GaAs) capped with GaAs. The porous structure formation was …