SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

An overview over issues and findings in SiC power MOSFET reliability is given. The focus of
this article is on threshold instabilities and the differences to Si power MOSFETs …

Abstract Silicon carbide (SiC) MOSFETs power modules are very attractive devices and are
already available in the market. Nevertheless, despite technological progress, reliability …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …

This paper presents a comprehensive study on degradation monitoring of silicon carbide
mosfets and proposes an early warning method to detect aging. The proposed plug-in tool …

This paper presents the design, fabrication, and characterization of the SiC JBSFET
(junction barrier Schottky (JBS) diode integrated MOSFET). The fabrication of the JBSFET …

Accurate information of the junction temperature of SiC power mosfets ensures safe
operation and helps reliability assessment of the devices. In this paper, an online junction …

Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of
the intrinsic body diode of SiC metal–oxide–semiconductor-field-effect transistor (SiC …

Commercially available silicon carbide (SiC) MOSFET power modules often have a design
based on existing packages previously used for silicon insulated-gate bipolar transistors …