Silicon carbide as an emerging technology offers potential benefits compared with the
currently used silicon. One of these advantages is higher efficiency. If this is targeted …

Silicon carbide (SiC) MOSFETs power modules are very attractive devices. Despite
technological progress, reliability remains an issue and reliability tests must be conducted to …

High-density packaging of fast-switching power semiconductors typically requires low
parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High …

The dual active full bridge (DAFB) is one of the promising isolated DC/DC converter
topologies that will play a significant role in the future of electric vehicle (EV) integration in …

Silicon carbide (SiC) power devices have demonstrated many performance advantages
over their silicon (Si) counterparts. As the inherent material limitations of Si devices are …

The impact of the body diode and the anti-parallel junction barrier Schottky (JBS) diode on
the switching performance of the 3rd generation 10 kV SiC MOSFET from Wolfspeed/Cree is …

Improvements in 900V SiC MOSFET technology have resulted in switches that have
extremely low ON resistance in high-speed packages. 900V SiC MOSFETs are promising …

In power electronic applications the replacement of the state-of-art Si-based IGBTs by SiC-
based Mosfets can bring improvements to the performance metrics of several systems, such …

Humidity and outdoor application are a challenge for Silicon (Si) and Silicon Carbide (SiC)
applications. This paper investigates the effect of humidity on SiC power MOSFET modules …

For the first time results are reported in literature of a successful field test using a silicon
carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) traction inverter …