Intelligent wearable devices based on nanomaterials and nanostructures for healthcare
Emerging classes of flexible electronic sensors as alternatives to conventional rigid sensors
offer a powerful set of capabilities for detecting and quantifying physiological and physical …
offer a powerful set of capabilities for detecting and quantifying physiological and physical …
Revolutionizing technology with spintronics: devices and their transformative applications
The scaling of metal oxide semiconductor field effect transistors (MOSFETs) for data storing
and logic circuit operation has reached a critical point, beyond which further scaling poses …
and logic circuit operation has reached a critical point, beyond which further scaling poses …
Robust approach towards wearable power efficient transistors with low subthreshold swing
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
An intensive study of tree-shaped JL-NSFET: digital and analog/RF perspective
This manuscript for the first time presents the digital and analog/RF performance analysis for
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …
Designing CMOS compatible efficient ohmic contacts to WSi 2 N 4 via surface-engineered Mo 2 B monolayer electrodes
Forming ohmic contacts between metals and semiconductors is critical to achieving high-
performance and energy-efficient electronics. Here we investigate the interface properties of …
performance and energy-efficient electronics. Here we investigate the interface properties of …
Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era
X Wang, C Liu, Y Wei, S Feng, D Sun, H Cheng - Materials Today, 2023 - Elsevier
Since the 1960s, the feature size of metal oxide semiconductor field-effect transistors has
been scaled down to sub-micrometer and even nanometer to increase the transistor density …
been scaled down to sub-micrometer and even nanometer to increase the transistor density …
Extended Gate to source overlap Heterojunction Vertical TFET: Design, analysis, and optimization with process parameter variations
This report highlights the simulated results of Extended gate to source overlap
Heterojunction Vertical Tunnel field effect transistor (EGH-VTFET) for low-power and high …
Heterojunction Vertical Tunnel field effect transistor (EGH-VTFET) for low-power and high …
Selective edge hydrogenated armchair ZnO nanoribbons for negative differential resistance based nanoelectronic devices
MS Krishna, S Singh - Physica E: Low-Dimensional Systems and …, 2023 - Elsevier
The current manuscript investigates the armchair ZnO nanoribbons (ZnONRs) for the
negative differential resistance (NDR) characteristics through edge modification. The first …
negative differential resistance (NDR) characteristics through edge modification. The first …
A survey of leakage reduction techniques in CMOS digital circuits for nanoscale regime
VK Sharma - Australian journal of electrical and electronics …, 2021 - Taylor & Francis
The battery-driven portable systems are the lifeline of the modern era. Very large-scale
integration (VLSI) designers are continuously working to enhance the performance of the …
integration (VLSI) designers are continuously working to enhance the performance of the …
Alzheimer's disease biomarker detection using field effect transistor-based biosensor
Alzheimer's disease (AD) is closely related to neurodegeneration, leading to dementia and
cognitive impairment, especially in people aged> 65 years old. The detection of biomarkers …
cognitive impairment, especially in people aged> 65 years old. The detection of biomarkers …