A broadband transformer-based power amplifier achieving 24.5-dBm output power over 24–41 GHz in 65-nm CMOS process
TH Fan, Y Wang, H Wang - IEEE Microwave and Wireless …, 2020 - ieeexplore.ieee.org
A fully integrated one-stage cascode wideband power amplifier (PA) in 65-nm CMOS
technology is presented in this letter. A matching technique is leveraged to achieve …
technology is presented in this letter. A matching technique is leveraged to achieve …
A wideband mm-wave watt-level spatial power-combined power amplifier with 26% PAE in SiGe BiCMOS technology
We present a wideband watt-level power amplifier (PA) for the-band designed and
implemented in the 0.25-SiGe: C BiCMOS technology. The core of the design is a chip with …
implemented in the 0.25-SiGe: C BiCMOS technology. The core of the design is a chip with …
A 20.8-41.6-GHz transformer-based wideband power amplifier with 20.4-dB peak gain using 0.9-V 28-nm CMOS process
CW Wang, YC Chen, WJ Lin, JH Tsai… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
This paper presents a wideband transformer-based power amplifier applicable for the
millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power …
millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power …
A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
28-GHz CMOS power amplifier linearized with resistive drain-body connection
G Cho, G Jeong, S Hong - IEEE Microwave and Wireless …, 2020 - ieeexplore.ieee.org
A 28-GHz two-stage differential cascode power amplifier (PA) linearized with a simple
common-source (CS) body network, in which the body of the CS amplifier at the power stage …
common-source (CS) body network, in which the body of the CS amplifier at the power stage …
應用於天文接收機之寬頻差動低雜訊放大器與應用於第五代行動通訊之寬頻功率放大器設計
范庭瑄 - 2021 - tdr.lib.ntu.edu.tw
中文摘要低雜訊放大器在接收機系統中扮演重要角色. 在射頻天文應用中,
需要高靈敏度的接收器. 對於平方公里陣列, 射頻望遠鏡的工作頻率範圍很寬 …
需要高靈敏度的接收器. 對於平方公里陣列, 射頻望遠鏡的工作頻率範圍很寬 …
A 21-39.5 GHz power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain broadband power amplifier for 5G wireless systems, which
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …
Current Re-Use Architecture and Pre-Distortion Technique Employing Re-Configurable Low Noise Amplifier for the Design of Nano-Electronic Sensors
K Suganthi, S Kayalvizhi… - Journal of …, 2023 - ingentaconnect.com
This study presents the design of reconfigurable CMOS Low Noise Amplifier (LNA)
topologies to achieve acceptable linearity, gain, and low noise for Nano-sensor applications …
topologies to achieve acceptable linearity, gain, and low noise for Nano-sensor applications …
18 to 37.5 GHz linear and efficient 5G power amplifier with adaptive biasing technique
MMR Esmael, MAY Abdalla - 2021 IEEE MTT-S International …, 2021 - ieeexplore.ieee.org
An efficient linear power amplifier (PA) which uses a new adaptive bias circuit is
implemented in TSMC 28-nm bulk CMOS process targeting 5G wireless communication …
implemented in TSMC 28-nm bulk CMOS process targeting 5G wireless communication …
Differential cascode amplifier arrangement with reduced common mode gate RF voltage
DW Nobbe - US Patent 11,601,098, 2023 - Google Patents
(C103 differential cascode amplifier are presented. Ground return loops, and therefore
corresponding parasitic inductances, are eliminated by using voltage symmetry at nodes of …
corresponding parasitic inductances, are eliminated by using voltage symmetry at nodes of …