Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

A Ponchet, L Pedesseau, A Le Corre, C Cornet… - Applied Physics …, 2019 - pubs.aip.org
The shape of InAs nanostructures formed by molecular beam epitaxy on a (001) InP
substrate in the Stranski-Krastanow growth mode is studied. A transition from wires to round …

Ultra-narrow linewidth self-adaptive photonic oscillator: principle and realization

M Alouini, G Danion, M Vallet - arXiv preprint arXiv:2108.03468, 2021 - arxiv.org
Highly coherent optical sources are a key element in several fields of physics, in particular in
time frequency metrology. Over the past decennia, there has been particular efforts in …

Flip-chip Wafer-fused OP-VECSELs emitting 3.65 W at the 1.55-μm waveband

A Mereuta, K Nechay, A Caliman… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-
chip gain mirrors emitting at the 1.55 μm wavelength range are reported. The gain mirrors …

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

A Kerchaoui, A Mereuta, A Caliman, C Paranthoen… - Optics Letters, 2021 - opg.optica.org
Class A shot-noise limited operation is achieved in an electrically pumped vertical external
cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar …

Extended L-band monolithically tunable InAs/InP quantum-dash multimode laser with integrated amplifier

E Alkhazraji, MS Alias, KK Qureshi… - Optical …, 2020 - spiedigitallibrary.org
A two-sectioned InAs/InP quantum dash laser structure is proposed and investigated as a
monolithic broadband multimodal tunable laser with an integrated semiconductor optical …

VECSELs in the Wavelength Range 1.18–1.55 μm

A Rantamäki, M Guina - Vertical External Cavity Surface …, 2021 - Wiley Online Library
This chapter provides an overview of vertical external‐cavity surface‐emitting lasers
(VECSELs) with fundamental emission in the wavelength range of 1.18–1.55 μm. The main …

InAs/InP quantum-dash lasers

MZM Khan, EA Alkhazraji, MTA Khan, TK Ng… - Nanoscale …, 2019 - Elsevier
This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash
(Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous …

Conception et réalisation d'une source VCSEL accordable pour un microsystème d'analyse de la peau par Tomographie par Cohérence Optique (OCT)

B Boisnard - 2019 - laas.hal.science
Ces travaux de thèse portent sur la conception, la réalisation et la caractérisation de diodes
VCSELs (Vertical-Cavity Surface-Emitting Lasers) accordables spectralement et intégrables …

1550-nm wavelength wafer-fused OP-VECSELs in flip-chip configuration

A Mereuta, K Nechay, A Caliman… - Vertical External …, 2019 - spiedigitallibrary.org
Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-
chip gain mirrors emitting at the 1.55-μm wavelength range are reported. The gain mirrors …

Fonctionnement Classe A faible bruit d'un laser VECSEL injecté électriquement et émettant à 1, 5 µm

A Kerchaoui, A Mereuta, A Caliman, S Bouhier… - OPTIQUE Dijon …, 2021 - hal.science
L'oscillation d'un laser VECSEL classe A faible bruit est obtenue pour la première fois à 1, 5
µm en pompage électrique. La zone active à base de puits quantiques sur substrat InP est …