Nanotechnology is at the forefront of scientific research and offers great prospects for the
development of technology. As a type of III-V semiconductor, GaSb materials exhibit …

We demonstrated a mode-locked fiber laser based on a novel photonic device that
combined optical microfiber coupler (OMC) and saturable absorption materials. The stable …

Optical-intensity modulators have increasingly important applications in optoelectronic field.
However, it still remains a challenge to find an optical intensity modulation material with …

Conventional solitons (CSs), and soliton molecules (SMs) consisting of two and three CSs in
a passively mode-locked erbium-doped fiber (EDF) laser based on InSb saturable absorber …

Intentional doping and unintentional impurities in intrinsic semiconductors generate carriers
that enable device operations. Fundamental to the electronic activity of dopants and …

A model of the spectral responsivity of In 1− χ Ga χ Sb pn junction infrared photodetectors is
developed. This model is based on calculations of the photogenerated and diffusion …

The residual carrier backgrounds of binary type-II InAs∕ GaSb superlattice photodiodes
with cutoff wavelengths around 5 μ m have been studied in the temperature range between …

The paper studies the properties of surface and near-surface region of a single crystalline
silicon sample doped with atoms of Ga (A III) and Sb (BV). n-type single-crystal Si wafers …

The microstructural properties at the initial growth stage of the GaSb heteroepitaxial growth
on a silicon (Si) substrate were investigated using transmission electron microscopy. Well …

A stable dissipative soliton (DS) erbium-doped fiber (EDF) laser passively mode locked by
InSb saturable absorber (SA) is achieved for the first time. The used InSb SA is prepared by …