Abstract Ternary (Bi 1− x Sb x) 2 Te 3 films with an Sb content between 0 and 100% were
deposited on a Si (1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction …

We investigate the low-temperature transport properties in Cu x Bi 2− x Se 3 films prepared
by a hot-wall-epitaxy growth of Bi 2 Se 3 layers on Cu-deposited substrates. We observe a …

Topological insulators (TIs) which exhibit spin-momentum locking constitute an interesting
class of quantum materials. In this paper, we present a systematic method to prepare Bi x Te …

Weak antilocalization and electron-electron interaction effects are investigated in Sb 2 Te 3
layers. We accomplish smooth top and bottom surfaces for the layer using molecular-beam …

Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly
observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often …

We explore the emergence of linear magnetoresistance in thin Bi 2 Se 3 sheets upon tuning
the carrier density using a back gate. With increasingly negative gate voltage, a pronounced …

We report thermoelectric transport studies on Bi 2 Se 3 topological insulator thin films with
varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and …

Molecular-beam epitaxy of topological insulator Bi2Se3 on different substrates is carried out,
including on clean and hydrogen-terminated Si (111), bismuth (Bi) induced Si (111)–(3× 3) …

The surface state of a topological insulator always has a weak antilocalization (WAL), and
the bulk state would theoretically have a weak localization (WL). Although the WAL …

Topological insulators (TIs) are exotic materials which have topologically protected states on
the surface due to strong spin-orbit coupling. However, a lack of ordered growth of TI thin …