Universal conductance fluctuations in a Bi1. 5Sb0. 5Te1. 8Se1. 2 topological insulator nano-scaled Hall bar structure

E Zimmermann, J Kölzer, M Schleenvoigt… - Semiconductor …, 2023 - iopscience.iop.org
We present low-temperature magnetotransport measurements characterizing the promising
quaternary Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator material. The measurements …

Weak localization and antilocalization in topological materials with impurity spin-orbit interactions

WE Liu, EM Hankiewicz, D Culcer - Materials, 2017 - mdpi.com
Topological materials have attracted considerable experimental and theoretical attention.
They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the …

Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates

X Liu, DJ Smith, H Cao, YP Chen, J Fan… - Journal of Vacuum …, 2012 - pubs.aip.org
Films of pseudohexagonal Bi 2 Te 3, Bi 2 Se 3 and their alloys were successfully grown by
molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural …

Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3

R Dey, T Pramanik, A Roy, A Rai, S Guchhait… - Applied Physics …, 2014 - pubs.aip.org
We have studied angle dependent magnetoresistance of Bi 2 Te 3 thin film with field up to 9
T over 2–20 K temperatures. The perpendicular field magnetoresistance has been …

Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering

M Zhang, Z Wei, R Jin, Y Ji, Y Yan, X Pu, X Yang… - Thin Solid Films, 2016 - Elsevier
Abstract Topological insulator Bi 2 Se 3 thin films were grown by magnetron sputtering on Si
(1 0 0) substrate and their phase structures and electrical properties were studied. The films …

Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi

Y Zhang, Z Liu, B Zhou, Y Kim, Z Hussain… - Applied Physics …, 2014 - pubs.aip.org
We report a molecular beam epitaxial growth of Na 3 Bi single-crystal thin films on two
different substrates—epitaxial bilayer graphene terminated 6H-SiC (0001) and Si (111) …

Crossover between weak antilocalization and weak localization in few-layer : Role of electron-electron interactions

X Zhang, JM Woods, JJ Cha, X Shi - Physical Review B, 2020 - APS
We report electron transport studies in an encapsulated few-layer W Te 2 at low
temperatures and high magnetic fields. The magnetoconductance reveals a temperature …

Insulating Half‐Heusler TmPdSb with Unusual Band Order and Metallic Surface States

S Dan, A Ptok, O Pavlosiuk, K Singh… - Advanced Functional …, 2024 - Wiley Online Library
Theoretical and experimental results exploring a half‐Heusler compound TmPdSb with
unusual band order and metallic surface states are presented. Typically, the half‐Heusler …

Inverse Spin Hall Effect in Electron Beam Evaporated Topological Insulator Bi2Se3 Thin Film

BB Singh, SK Jena, M Samanta… - physica status solidi …, 2019 - Wiley Online Library
Spintronics exploiting pure spin current in ferromagnetic (FM)/heavy metals (HM) is a subject
of intense research. Topological insulators having spin momentum locked surface states …

Weak antilocalization and interaction-induced localization of Dirac and Weyl Fermions in topological insulators and semimetals

HZ Lu, SQ Shen - Chinese Physics B, 2016 - iopscience.iop.org
Weak localization and antilocalization are quantum transport phenomena that arise from the
quantum interference in disordered metals. At low temperatures, they can give distinct …