Electronics based on two-dimensional materials

G Fiori, F Bonaccorso, G Iannaccone, T Palacios… - Nature …, 2014 - nature.com
The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …

Review and projections of integrated cooling systems for three-dimensional integrated circuits

SG Kandlikar - Journal of Electronic Packaging, 2014 - asmedigitalcollection.asme.org
In an effort to increase processor speeds, 3D IC architecture is being aggressively pursued
by researchers and chip manufacturers. This architecture allows extremely high level of …

Interconnect limits on gigascale integration (GSI) in the 21st century

JA Davis, R Venkatesan, A Kaloyeros… - Proceedings of the …, 2001 - ieeexplore.ieee.org
Twenty-first century opportunities for GSI will be governed in part by a hierarchy of physical
limits on interconnects whose levels are codified as fundamental, material, device, circuit …

[图书][B] Three-dimensional integrated circuit design

VF Pavlidis, I Savidis, EG Friedman - 2017 - books.google.com
Three-Dimensional Integrated Circuit Design, Second Eition, expands the original with more
than twice as much new content, adding the latest developments in circuit models …

[图书][B] Laser annealing of semiconductors

J Poate - 2012 - books.google.com
Laser Annealing of Semiconductors deals with the materials science of surfaces that have
been subjected to ultrafast heating by intense laser or electron beams. This book is …

Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide

F Demichelis, CF Pirri, E Tresso - Journal of Applied Physics, 1992 - pubs.aip.org
Amorphous and microcrystalline silicon carbide, undoped and doped, has attracted a great
attention for its optical and electrical properties. The introduction of dopant atoms in the …

Interconnect-based design methodologies for three-dimensional integrated circuits

VF Pavlidis, EG Friedman - Proceedings of the IEEE, 2009 - ieeexplore.ieee.org
Design techniques for three-dimensional (3-D) ICs considerably lag the significant strides
achieved in 3-D manufacturing technologies. Advanced design methodologies for two …

[图书][B] Oriented crystallization on amorphous substrates

EI Givargizov - 2013 - books.google.com
Present-day scienceand technology have become increasingly based on studies and
applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor …

Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theory

DM Kim, AN Khondker, SS Ahmed… - IEEE Transactions on …, 1984 - ieeexplore.ieee.org
A theory of conduction in polycrystalline silicon is presented. The present approach
fundamentally differs from previous theories in its treatment of the grain boundary. This …

One-gate-wide CMOS inverter on laser-recrystallized polysilicon

JF Gibbons, KF Lee - IEEE Electron Device Letters, 1980 - ieeexplore.ieee.org
A CMOS inverter having a single gate for both n and p channel devices has been fabricated
using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n …