Ag-doped non–imperfection-enabled uniform memristive neuromorphic device based on van der Waals indium phosphorus sulfide

Y Li, Y Xiong, B Zhai, L Yin, Y Yu, H Wang, J He - Science Advances, 2024 - science.org
Memristors are considered promising energy-efficient artificial intelligence hardware, which
can eliminate the von Neumann bottleneck by parallel in-memory computing. The common …

Memristor arrays formed by reversible formation and breakdown of nanoscale silica layers on Si–H surfaces

CR Peiris, S Ferrie, S Ciampi… - ACS Applied Nano …, 2022 - ACS Publications
Nonvolatile resistive switching, also known as the memristor effect, has emerged as an
important concept in the development of neuromorphic computing. Memristive operation …

Systematic engineering of metal ion injection in memristors for complex neuromorphic computing with high energy efficiency

SE Kim, MH Kim, J Jang, H Kim, S Kim… - Advanced Intelligent …, 2022 - Wiley Online Library
Neuromorphic electronics attract significant attention as a new computing architecture.
Despite much effort for achieving practical neuromorphic systems, it is still challenging to …

Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices

W Lee, S Iqbal, J Kim, S Lee, J Lee, M Kumar… - Applied Surface …, 2023 - Elsevier
Vanadium dioxide (VO 2) is a representative metal–insulator-transition (MIT) material that
undergoes a reversible phase transition at 68° C, which is close to room temperature. This …

[HTML][HTML] An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

D Maldonado, C Aguilera-Pedregosa, G Vinuesa… - Chaos, Solitons & …, 2022 - Elsevier
An in-depth simulation and experimental study has been performed to analyze thermal
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques

SM Patil, SS Kundale, SS Sutar, PJ Patil, AM Teli… - Scientific Reports, 2023 - nature.com
In the present study, various statistical and machine learning (ML) techniques were used to
understand how device fabrication parameters affect the performance of copper oxide …

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

S Wiefels, N Kopperberg, K Hofmann… - … status solidi (a), 2023 - Wiley Online Library
Approaching the application of redox‐based resistive switching random access memory
(ReRAM), the research focus shifts more and more toward different aspects of reliability …

Volatile threshold switching memristor: An emerging enabler in the AIoT era

W Zuo, Q Zhu, Y Fu, Y Zhang, T Wan, Y Li… - Journal of …, 2023 - iopscience.iop.org
With rapid advancement and deep integration of artificial intelligence and the internet-of-
things, artificial intelligence of things has emerged as a promising technology changing …

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

H He, Y Tan, C Lee, Y Zhao - Electronics, 2023 - mdpi.com
HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been
extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its …

Nanocomposite parylene-C memristors with embedded Ag nanoparticles for biomedical data processing

AN Matsukatova, AV Emelyanov, VA Kulagin… - Organic …, 2022 - Elsevier
Neuromorphic networks adopt human brain mechanisms and create a promising way to
solve various artificial cognitive problems. Memristors, novel circuit design elements, could …