A review of technologies and design techniques of millimeter-wave power amplifiers
V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …
focusing on broadband design techniques. An overview of the main solid-state technologies …
A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs
This letter reports on the improvement of the large-signal W-band power performance of
nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition …
nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition …
GaN integrated circuit power amplifiers: Developments and prospects
R Nikandish - IEEE Journal of Microwaves, 2022 - ieeexplore.ieee.org
GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
D-band and G-band high-performance GaN power amplifier MMICs
M Ćwikliński, P Brückner, S Leone… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide
state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) …
state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) …
- and -Band Millimeter-Wave GaN MMICs
This paper gives an overview of published results with GaN MMICs for millimeter-wave front
ends at frequencies above 60 GHz, including power and low-noise amplifiers, switches …
ends at frequencies above 60 GHz, including power and low-noise amplifiers, switches …
Versatile dual-receiver 94-GHz FMCW radar system with high output power and 26-GHz tuning range for high distance applications
Airborne applications demand exceptional overall radar system performance and eminently
high output power for high range target detection. The frequency modulated continuous …
high output power for high range target detection. The frequency modulated continuous …
24.8 A W-band power amplifier with distributed common-source GaN HEMT and 4-Way Wilkinson-Lange combiner achieving 6W output power and 18% PAE at …
W Wang, F Guo, T Chen, K Wang - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless
communication, imaging, and radar applications. Traditionally, multiple transistors are …
communication, imaging, and radar applications. Traditionally, multiple transistors are …
Commercially available N-polar GaN HEMT epitaxy for RF applications
Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF
and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we …
and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we …
-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications
Y Wang, F Lin, H Sun, H Wu, C Xu… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
This article presents a-band integrated transceiver (T/R) single chip based on gallium nitride
(GaN) high electron mobility transistor (HEMT) technology for active electronically scanned …
(GaN) high electron mobility transistor (HEMT) technology for active electronically scanned …