A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …

To fulfill the insatiable demand for high data-rates, the millimeter-wave (mmW) 5G
communication standard will extensively use high-order complex-modulation schemes (eg …

The opening of spectral bands in the millimeter-wave (mm-Wave) spectrum from 26 GHz
and extending up to the E-band poses new challenges to the power amplifier (PA) design for …

Designing Doherty power amplifiers (PAs) at high millimeter-wave (mm-Wave) range
remains a major challenge because most Doherty combiners at this frequency band are …

Spectrally efficient operation with high power and high efficiency at deep backoff will be
critical for the next generation of millimeter-wave (mm-wave) transmitters for 5G and beyond …

This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …

This paper presents a Doherty radiator architecture that explores multi-feed antennas to
achieve an on-antenna Doherty load modulation network and demonstrates high-speed …

A transformer-based high-order resonator is proposed to improve the locking range (LR) of
the millimeter-wave injection-locked frequency dividers (ILFDs). The LR limitations on ILFDs …

A fully integrated power amplifier (PA) for 5G communication systems is realized in a 28-nm
bulk CMOS technology. Power combining and stacking techniques are used to achieve a …

A Ka-band CMOS cascode power amplifier (PA) linearized with a cold-FET-based interstage
matching network is presented, which is designed in a 65-nm CMOS process. Since it is …