This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of
semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and …

Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in
semiconductor manufacturing, whereby the crystal is grown from a rich solution of the …

Sophisticated technologies1–19 for the growth of high-quality epitaxial layers of compound
semiconductor heterostructure materials on single crystal semiconductor substrates are …

In the past decades, great efforts have been made to develop efficient solar-to-fuel
conversion devices using III–V semiconductors. In this chapter, a brief history of III–V …

The fabrication and operation of Bragg gratings for future wavelength-division multiplexing
(WDM) devices in integrated optical circuits are discussed. Crosstalk attenuation of more …

Precisely controlled epitaxial growth of microscopically thin semiconductor layers is
essential for lightwave source and detector components. Achieving precise control while …

GaAs PiN layers with an i-region net doping of less than 10 12 cm− 3 were grown on P+ and
N+ substrates by a modified liquid phase epitaxy (LPE) method. Doping profiles and …

Abstract atomic layer epitaxy (ALE) epitaxy methods and operational parameters liquid
phase epitaxy (LPE) liquid‐phase electro‐epitaxy (LPEE) LPE technique, crystal growth and …

The fundamentals of liquid-phase epitaxy of compound semiconductors are presented.
Selected topics associated with the chemical processing of semiconductors by this …

Рассмотрена возможность создания методом жидкофазной эпитаксии
фотопреобразователей лазерного излучения на основе гетероструктур InP (GaAs)/InP …