Wide-bandgap power devices are expected to open the way to achieve an integrated power
circuit with higher power density. However, the large surge voltage and ringing caused by …

The voltage unbalance among the devices remains one of the critical challenges to connect
the devices in series in medium voltage, high power applications. In this paper, a coupled …

The present paper identifies the root causes of current ringing in a Dual Active Bridge (DAB)
power converter and proposes a novel methodology to design the magnetic tank …

The gate-driver circuits are required to control the switching dynamics of the power
electronic (PE) devices. These gate-drivers can be categorized as the voltage-source drivers …

The utilization of novel cascode GaN devices can significantly increase the power density
and the efficiency of convertors. However, owing to high switching speed (high dv/dt or di/dt) …

This study demonstrates a high-slew-rate 5-kV pulse generator for electrical insulation tests.
Electrical equipment, such as electrical actuators and traction drive motors, are exposed to …

This paper presents a new high-bandwidth multilevel gate-drive topology for use in Silicon
Carbide (SiC) Active Gate-Driver Development. The presented Modular Multilevel gate …

为了满足电力电子系统高频, 高效和高功率密度的需求, 碳化硅金属氧化物半导体场效应管(
silicon carbide metal oxide semiconductor field effect transistor, SiC MOSFET) …

In this paper, a SiC MOSFETs gate driver for parallel connections is proposed and
implemented. The proposed design enhances the reliability of parallel-connected SiC …

In this paper, a digital active gate driver for SiC power MOSFETs is proposed. High‐
frequency switching with SiC power MOSFETs can realize an integrated power circuit with …