Silicon Carbide (SiC) MOSFETs are widely used in high efficiency power electronic
converters because of their fast switching speed and low conduction losses. However, the …

The effect of the gate drive on the power-processing capacity of a hard-switched insulated-
gate bipolar transistor (IGBT) in a bridge leg is investigated in this article. The performance …

All Silicon carbide (SiC) devices have the advantages of high switching speed and low loss.
The current slew rate di/dt, current and voltage spikes, oscillation current/voltage and turn-on …

SiC MOSFETs are characterized by fast switching speeds typically in the range of 50-60 ns.
However, the parasitic MOSFET capacitance and load parasitic capacitance form a resonant …

Surface nuclear magnetic resonance (SNMR) technology based on a prepolarization field is
a new geophysical method that offers a higher resolution for detecting shallow groundwater …

The bootstrap gate driver circuits are widely used for bridge-arm-type high-current and high-
power-density converters due to their low cost and compact structures. In high-current …

摘要工作于临界电流模式下的图腾柱无桥功率因数校正(PFC) 电路因其无整流桥损耗,
电感体积小, 易于实现软开关而得到广泛关注. 然而, 在输入电压过零点处 …

Pulsewidth modulated (PWM) voltage supply is important for efficiently controlling the
performance of electric motors. The downside brought up by its use is that the electric stress …

Active gate driving (AGD) is a promising concept for achieving high‐performance power
transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their …

A variable gate resistance SiC MOSFET drive circuit is proposed. The switching speed of
SiC MOSFET is improved by switching different drive resistors at different stages of the SiC …