Performance, power, and area design trade-offs in millimeter-wave transmitter beamforming architectures

H Yan, S Ramesh, T Gallagher, C Ling… - IEEE Circuits and …, 2019 - ieeexplore.ieee.org
Millimeter wave (mmW) communications is viewed as the key enabler of 5G cellular
networks due to vast spectrum availability that could boost peak rate and capacity. Due to …

Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET

RR Shaik, L Chandrasekar, JP Raskin… - Microelectronics …, 2022 - Elsevier
In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …

Integrated scalable and tunable RF CMOS SOI quadrature hybrid coupler

V Knopik, B Moret, E Kerherve - 2017 12th European …, 2017 - ieeexplore.ieee.org
Hybrid is a key component in RF and Microwave design, and particularly for balanced power
amplifier (PA). This paper describes a pragmatic approach of the quadrature hybrid …

A 28-GHz CMOS broadband single-path power amplifier with 17.4-dBm P1dB for 5G phased-array

C Yu, J Feng, D Zhao - … 2018-IEEE 44th European Solid State …, 2018 - ieeexplore.ieee.org
This paper reports a fully integrated broadband and linear power amplifier (PA) for 5G
phased-array. Weakly-and strongly-coupled transformers are compared and analyzed in …

A 31 GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAEmax and 17.9dBm Psatin 28nm FD-SOI CMOS

F Torres, M De Matos, A Cathelin… - 2018 IEEE Radio …, 2018 - ieeexplore.ieee.org
In this paper, a 31GHz reconfigurable balanced 2-stage power amplifier (PA) integrated in
28nm FD-SOI CMOS technology is demonstrated aiming for SoC implementation. Fine grain …

A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS

X Xu, S Li, L Szilagyi, C Matthus… - 2020 50th European …, 2021 - ieeexplore.ieee.org
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …

A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3: 1 VSWR for 5G Application

G Diverrez, E Kerhervé… - 2022 52nd European …, 2022 - ieeexplore.ieee.org
This paper presents a broadband balanced power amplifier (PA) for 5G mm-wave
applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active …

Effective am-pm cancellation with body bias for 5g cmos power amplifier design in 22nm fd-soi

JC Mayeda, J Tsay, DYC Lie… - 2019 IEEE International …, 2019 - ieeexplore.ieee.org
Novel linearity enhancement using body bias tuning for 24-28 GHz CMOS SOI power
amplifier (PA) design is reported. The differential PA is designed, laid out, and taped out in …

A 60-GHz SiGe power amplifier with three-conductor transmission-line-based Wilkinson baluns and asymmetric directional couplers

Y Gong, JD Cressler - IEEE Transactions on Microwave Theory …, 2020 - ieeexplore.ieee.org
A compact, 60-GHz high-power, wideband balanced power amplifier, implemented in a 90-
nm SiGe BiCMOS technology, is demonstrated. A three-conductor transmission-line-based …

A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

Z Zong, X Tang, J Nguyen, K Khalaf… - 2020 IEEE Custom …, 2020 - ieeexplore.ieee.org
We present a two-way current combining power amplifier (PA) for 28GHz wireless
communication. To boost the saturated output power (P SAT) and maintain a high power …