Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic
exceptional electronic properties of two dimensional WSe2 devices. We present the first …

Elemental 2D black phosphorus (BP) is a highly anisotropic versatile material capable of
exhibiting wide ranging electronic characteristics ranging from semi-metallic to …

Owing to the increasing interest in the nonvolatile memory devices, resistive switching
based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and …

Field-effect transistors based on two-dimensional materials are a potential replacement for
silicon-based devices in next-generation semiconductor chips. However, the weak …

We report field electron emission investigations on pulsed laser-deposited molybdenum
disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen …

The development of low resistance contacts to 2D transition-metal dichalcogenides (TMDs)
is still a big challenge for the future generation field effect transistors (FETs) and …

The attractive mechanical and electronic properties of freestanding graphene has led to the
exploration of two‐dimensional (2D) materials which can be integrated with contemporary …

As an emerging class of new materials, two-dimensional (2D) non-graphene materials,
including layered and non-layered, and their heterostructures are currently attracting …

Two-dimensional (2D) single-layer MoS2 nanosheets are demonstrated as efficient
photocatalysts for hydrogen evolution reaction (HER) from water reduction, thanks to specific …

Substitutional doping has been proven to be an effective route to engineer band gap,
transport characteristics, and magnetism in transition metal dichalcogenides. Herein, we …