Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact
A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal
dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices …
dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices …
Progress on electronic and optoelectronic devices of 2D layered semiconducting materials
2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors,
holding many novel properties, such as the absence of surface dangling bonds, sizable …
holding many novel properties, such as the absence of surface dangling bonds, sizable …
Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS2
Dopants in two-dimensional dichalcogenides have a significant role in affecting electronic,
mechanical, and interfacial properties. Controllable doping is desired for the intentional …
mechanical, and interfacial properties. Controllable doping is desired for the intentional …
A promising strategy to tune the Schottky barrier of a MoS 2 (1− x) Se 2x/graphene heterostructure by asymmetric Se doping
J Hu, W Duan, H He, H Lv, C Huang… - Journal of Materials …, 2019 - pubs.rsc.org
Controlling the p-type electrical transport behavior of nanoelectronic devices remains a
grand challenge in reducing the Schottky barrier. To address this issue, we systematically …
grand challenge in reducing the Schottky barrier. To address this issue, we systematically …
Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation
We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals
and demonstrate excellent current saturation at large drain voltages (V d). The low-field …
and demonstrate excellent current saturation at large drain voltages (V d). The low-field …
Current Transport and Band Alignment Study of MoS2/GaN and MoS2/AlGaN Heterointerfaces for Broadband Photodetection Application
Gallium nitride (GaN) and aluminium gallium nitride (AlGaN) are promising materials for
optoelectronics because of their direct band gap and high electron mobility. However, their …
optoelectronics because of their direct band gap and high electron mobility. However, their …
Pt decorated MoS2 nanoflakes for ultrasensitive resistive humidity sensor
In this work, we report the fabrication of a low power, humidity sensor where platinum
nanoparticles (NPs) decorated few-layered molybdenum disulphide (MoS 2) nanoflakes …
nanoparticles (NPs) decorated few-layered molybdenum disulphide (MoS 2) nanoflakes …
Observation of Switchable Photoresponse of a Monolayer WSe2–MoS2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging
In the pursuit of two-dimensional (2D) materials beyond graphene, enormous advances
have been made in exploring the exciting and useful properties of transition metal …
have been made in exploring the exciting and useful properties of transition metal …
[HTML][HTML] Recent advances in electronic and optoelectronic devices based on two-dimensional transition metal dichalcogenides
Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive
features for use in next-generation electronic and optoelectronic devices. Device …
features for use in next-generation electronic and optoelectronic devices. Device …
Graphdiyne oxide-sandwiched MoS2 heterostructure with sufficient hetero-interphase and highly expanded interlayer for efficient hydrogen evolution
Molybdenum disulfide (MoS 2) has emerged as an attractive and cost-effective alternative to
platinum (Pt) catalysts in electrochemical hydrogen evolution reactions (HER). However, its …
platinum (Pt) catalysts in electrochemical hydrogen evolution reactions (HER). However, its …