Provided that the shape, size, and composition profile of semiconductor-embedded quantum
dots are given, theory is able to accurately calculate the excitonic transitions, including the …

Résumé Les boîtes quantiques uniques présentent un grand intérêt potentiel comme brique
de base des composants pour l'information quantique. Cependant, une des difficultés …

We have developed a three-dimensional model for electronic states calculation of
interdiffused quantum dots (QDs) with arbitrary shape by solving the BenDaniel-Duke's …

Epitaxial self-assembled quantum dots (QDs) are commonly obtained by the Stranski-
Krastanow (SK) growth mode, in which QDs form on top of a thin two-dimensional (2D) …

We have investigated the effect of strain on the g-factors of self-assembled In (Ga) As dots by
single-dot spectroscopy and an eight-band effective mass calculation taking into account the …

We report a combined experimental and theoretical analysis of Sb and In segregation during
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …

We present a model for the effect of thermal annealing on a single-layer InAs/GaAs quantum
dot (QD) heterostructure and study the corresponding variation in full photoluminescence …

We compare the asymmetry-induced exchange splitting δ 1 of the bright-exciton ground-
state doublet in self-assembled (In, Ga) As∕ GaAs quantum dots, determined by Faraday …

We have investigated the carrier dynamics in annealed quantum dots where the energy-
level separation of the optical transitions can be tuned between 68 and 19 meV …

We have investigated the intermixing effect of multilayer self-assembled InAs/GaAs quantum
dots on photoluminescence (PL) spectra. Proton implantation combined with rapid thermal …