Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots
A Babinski, J Jasinski - Thin Solid Films, 2002 - Elsevier
Results of a post-growth rapid thermal annealing (RTA) on GaAs proximity-capped
structures with high density (∼ 1011 cm− 2) of self-assembled InAs/GaAs quantum dots …
structures with high density (∼ 1011 cm− 2) of self-assembled InAs/GaAs quantum dots …
[HTML][HTML] Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing
P Aivaliotis, EA Zibik, LR Wilson, JW Cockburn… - Applied Physics …, 2007 - pubs.aip.org
We report on wide spectral tunability of narrow-band (Δ λ∕ λ∼ 12%) In As∕ In 0.15 Ga 0.85
As∕ Ga As quantum dot-in-a-well infrared photodetectors using postgrowth rapid thermal …
As∕ Ga As quantum dot-in-a-well infrared photodetectors using postgrowth rapid thermal …
[HTML][HTML] The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si
The effect of post-growth annealing (PGA) on dot-in-well (DWELL) structures grown on Si
substrates has been studied. The photoluminescence (PL) measurements showed that …
substrates has been studied. The photoluminescence (PL) measurements showed that …
Inhomogeneous broadening in quantum dots with ternary aluminum alloys
CN Allen, P Finnie, S Raymond, ZR Wasilewski… - Applied Physics …, 2001 - pubs.aip.org
We study how the optical properties of InAs self-assembled quantum dots (QDs) grown on
GaAs substrate are affected when using AlGaAs barriers to increase the carrier confinement …
GaAs substrate are affected when using AlGaAs barriers to increase the carrier confinement …
[HTML][HTML] Band gap tuning of InAs∕ InP quantum sticks using low-energy ion-implantation-induced intermixing
Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 C for
120 s were used to create point defects and promote intermixing in InAs∕ InP quantum stick …
120 s were used to create point defects and promote intermixing in InAs∕ InP quantum stick …
Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications
A Ludwig, R Roescu, AK Rai, K Trunov… - Journal of crystal …, 2011 - Elsevier
We have observed room temperature (RT) electrical spin injection in an InAs quantum dot
(QD) light emitting diode (LED) grown on a p-type GaAs substrate from a ferromagnetic …
(QD) light emitting diode (LED) grown on a p-type GaAs substrate from a ferromagnetic …
An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing
Effect of post-growth annealing on 10 layer stacked InAs/GaAs quantum dots (QDs) with
InAlGaAs/GaAs combination capping layer grown by molecular beam epitaxy has been …
InAlGaAs/GaAs combination capping layer grown by molecular beam epitaxy has been …
[HTML][HTML] Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
We demonstrate the control of GaAs quantum dots morphology by using a thin AlGaAs
capping layer. The AlGaAs layer uniformly covers the GaAs quantum dots and provides …
capping layer. The AlGaAs layer uniformly covers the GaAs quantum dots and provides …
Impact of rapid thermal annealing on magneto-optical properties and oscillator strength of In(Ga)As quantum dots
We discuss the influence of a rapid thermal annealing step on the magneto-optical emission
properties of In (Ga) As/GaAs quantum dots. We map out a strong influence of the growth …
properties of In (Ga) As/GaAs quantum dots. We map out a strong influence of the growth …
Investigation of thermal interdiffusion in InAs/In0. 15Ga0. 85As/GaAs quantum dot-in-a-well heterostructures
An analysis of the effects of rapid thermal annealing on the photoluminescence spectrum of
InAs/In 0.15 Ga 0.85 As/GaAs Quantum dot-in-a-well heterostructures is presented. The …
InAs/In 0.15 Ga 0.85 As/GaAs Quantum dot-in-a-well heterostructures is presented. The …