This article presents a broadband power amplifier (PA) with a distributed-balun output
network that provides the PA optimum load impedance over a wide bandwidth. The …

Silicon-based millimeter-wave (mm-Wave) power amplifiers (PAs) with high power and high
peak/back-off efficiency are highly desired to efficiently amplify multi-Gb/s 5G NR signals …

A high-efficiency 28 GHz/39 GHz concurrent dual-band power amplifier (PA) is proposed
using the 90 nm GaAs pseudomorphic high-electron mobility transistor (pHEMT) process for …

This paper shows, using a technical perspective, the evolution of mobile technologies, from
the second generation (2G) to the fifth generation (5G). It is analyzed from the following …

Broadband millimeter-wave power amplifiers have attracted much attention and have wide
applications for 5G communication, satellite communication, radar, sensing, etc. Yet, it is …

This paper presents a compact transformer-based linear and efficient power amplifier (PA) in
0.13-μm SiGe: C BiCMOS for 5G applications. To reduce the form factor, an ultra-compact …

This article presents the design and theoretical analysis of a broadband power amplifier
(PA) using the transformer-based lossy magnetically coupled resonator (MCR) network. The …

This brief presents a K-band broadband power amplifier (PA) fabricated with 0.13-CMOS
technology for fifth-generation (5G) and radar applications. Asymmetrical magnetically …

Long WANG received the MS degree from Hangzhou Dianzi University, Hangzhou, China,
in 2018. He is currently pursuing the Ph. D. degree in Electronic Information with the …

A K-band high-gain, high-efficiency power amplifier chip based on 130 nm SiGe BiCMOS
has been designed. A differential common-emitter is adopted to reduce the power …