Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

M Gawełczyk, M Syperek, A Maryński, P Mrowiński… - Physical Review B, 2017 - APS
We present a theoretical and experimental investigation of exciton recombination dynamics
and the related polarization of emission in highly in-plane asymmetric nanostructures …

[HTML][HTML] Vanishing fine structure splitting in highly asymmetric InAs/InP quantum dots without wetting layer

M Zieliński - Scientific Reports, 2020 - nature.com
Contrary to simplified theoretical models, atomistic calculations presented here reveal that
sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even …

Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band

M Gawełczyk, P Wyborski, P Podemski, JP Reithmaier… - Physical Review B, 2019 - APS
We investigate strongly asymmetric self-assembled nanostructures with one of the
dimensions reaching hundreds of nanometers. Close to the nanowirelike type of …

Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths

P Mrowiński, M Emmerling, C Schneider… - Physical Review B, 2018 - APS
In this work, we discuss a method to control the polarization anisotropy of spontaneous
emission from neutral excitons confined in quantum-dot-like nanostructures, namely single …

Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

S Michael, M Lorke, M Cepok, C Carmesin, F Jahnke - Physical Review B, 2018 - APS
Tunnel-injection lasers promise various advantages in comparison to conventional laser
designs. In this paper, the physics of the tunnel-injection process is studied within a …

[HTML][HTML] InP-substrate-based quantum dashes on a DBR as single-photon emitters at the third telecommunication window

P Wyborski, A Musiał, P Mrowiński, P Podemski… - Materials, 2021 - mdpi.com
We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum
dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial …

[HTML][HTML] Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

W Rudno-Rudziński, M Syperek, J Andrzejewski… - AIP Advances, 2017 - pubs.aip.org
We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …

[PDF][PDF] Excitons in asymmetric nanostructures: Confinement regime

M Gawełczyk - Acta Phys. Pol. A, 2018 - przyrbwn.icm.edu.pl
The impact of the quantum confinement strength, defined by the width and depth of potential-
energy well for carriers, on properties of correlated electron–hole pairs (excitons) was the …

[HTML][HTML] Optical properties of site-selectively grown inas/inp quantum dots with predefined positioning by block copolymer lithography

P Holewa, J Jasiński, A Shikin, E Lebedkina… - Materials, 2021 - mdpi.com
The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved
photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet …

Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

AV Mikhailov, VV Belykh, DR Yakovlev, PS Grigoryev… - Physical Review B, 2018 - APS
We investigate the electron and hole spin relaxation in an ensemble of self-assembled
InAs/In 0.53 Al 0.24 Ga 0.23 As/InP quantum dots with emission wavelengths around 1.5 μ m …