[HTML][HTML] Recent progress in heterogeneous III-V-on-silicon photonic integration

D Liang, JE Bowers - Light: Advanced Manufacturing, 2021 - light-am.com
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …

[PDF][PDF] An advanced III-V-on-silicon photonic integration platform

Y Hu, D Liang, RG Beausoleil - Opto-Electronic Advances, 2021 - researching.cn
In many application scenarios, silicon (Si) photonics favors the integration of III-V gain
material onto Si substrate to realize the on-chip light source. In addition to the current …

III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

Y Hu, D Liang, K Mukherjee, Y Li, C Zhang… - Light: Science & …, 2019 - nature.com
Silicon photonics is becoming a mainstream data-transmission solution for next-generation
data centers, high-performance computers, and many emerging applications. The …

Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition

AS Pashchenko, OV Devitsky, LS Lunin, IV Kasyanov… - Thin Solid Films, 2022 - Elsevier
GaInAsP solid solutions are synthesized on GaAs substrates by pulsed laser deposition and
the effect of the laser fluence on the morphology and structure of the films is studied. It is …

InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

Z Jiao, W Huang, B Liu, J Lin, T You, S Wang… - Materials Science in …, 2021 - Elsevier
Abstract The properties of InAs/In 0.53 Ga 0.37 As triangular quantum wells (QWs) grown on
an InP/SiO 2/Si integrated substrate by ion-slicing technology are investigated. The material …

Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate

L Zhao, K Agata, R Yada, K Shimomura - Journal of Electronic Materials, 2024 - Springer
This paper explores the propagation loss in waveguides on directly bonded InP/Si
substrates, using numerical simulations to understand the effect of voids within the …

Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate

GK Periyanayagam, K Shimomura - physica status solidi (a), 2024 - Wiley Online Library
The article presents the study on the comparison of gain coefficient of laser diode on silicon
and InP substrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si substrate is successfully …

AlGaInAs MQW Laser Regrowth on Heterogenerous InP-on-SOI: Performance for Different Silicon Cavity Designs

C Besancon, D Néel, J Ramirez, D Bitauld… - Optical Fiber …, 2021 - opg.optica.org
AlGaInAs MQW Laser Regrowth on Heterogenerous InP- on-SOI : Performance for Different
Silicon Cavity Designs Page 1 1 AlGaInAs MQW Laser Regrowth on Heterogenerous InPon-SOI …

Numerical Analysis and Lasing Characteristics of GaInAsP Double-Heterostructure Lasers on InP/Si Substrate

GK Periyanayagam, K Shimomura - Journal of Electronic Materials, 2022 - Springer
Deposition of GaInAsP crystalline layer structures on a directly bonded InP/Si substrate for
the fabrication of a laser diode device was explored using conventional metal–organic vapor …

Regrowth-free monolithic vertical integration of passive and active waveguides

SP Duggan - 2019 - cora.ucc.ie
Data usage continues to rise exponentially with user demand, and the bandwidth of optical
communications is reaching its limit. Spectrally efficient advanced modulation formats are …