Exploration of the Stranski-Krastanow growth of strained semiconductor heterostructures
marked the major breakthrough for easy fabrication of defect-free quantum dots (QDs). For …

Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …

This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based
lasers. These low-dimensional structures have proved very attractive in improving most of …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …

We demonstrate for the first time a strain-controlled all polarization-maintaining (PM) fiber
Lyot filter based on a piezoelectric lead zirconate titanate (PZT) fiber stretcher. This filter is …

In this monograph, the authors address the physics and engineering together with the latest
achievements of efficient and compact ultrafast lasers based on novel quantum-dot …

We demonstrate a passive mode-locked Er: Yb doped double-clad ring fiber laser based on
graphene saturable absorber. By adjusting the polarization controller and minimizing the …

Hybrid mode locking in a two-section edge-emitting semiconductor laser is studied
numerically and analytically using a set of three delay differential equations. In these …

Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at
1310 nm are promising sources for high-speed and high-capacity communication …

In this paper, we study the dynamics of a passively mode-locked semiconductor laser with
dual-frequency coherent optical injection. The locking regions, where the laser pulse …