III-Nitride nanowire optoelectronics

S Zhao, HPT Nguyen, MG Kibria, Z Mi - Progress in Quantum Electronics, 2015 - Elsevier
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges

MG Kibria, Z Mi - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Artificial photosynthesis, ie the chemical transformation of sunlight, water and carbon dioxide
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

MG Kibria, S Zhao, FA Chowdhury, Q Wang… - Nature …, 2014 - nature.com
Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-
neutral, storable and sustainable source of energy. Here we show that one of the major …

Metal nitride-based nanostructures for electrochemical and photocatalytic hydrogen production

HS Gujral, G Singh, AV Baskar, X Guan… - … and Technology of …, 2022 - Taylor & Francis
The over-dependence on fossil fuels is one of the critical issues to be addressed for
combating greenhouse gas emissions. Hydrogen, one of the promising alternatives to fossil …

Surface-induced effects in GaN nanowires

R Calarco, T Stoica, O Brandt… - Journal of materials …, 2011 - cambridge.org
Semiconductor nanowires (NWs) are characterized by an extraordinarily large surface-to-
volume ratio. Consequently, surface effects are expected to play a much larger role than in …

P-type doping of GaN nanowires characterized by photoelectrochemical measurements

J Kamimura, P Bogdanoff, M Ramsteiner, P Corfdir… - Nano Letters, 2017 - ACS Publications
GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si (111)
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …

Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence

SD Carnevale, TF Kent, PJ Phillips, MJ Mills… - Nano …, 2012 - ACS Publications
Almost all electronic devices utilize a pn junction formed by random doping of donor and
acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed …

Self‐induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

V Consonni - physica status solidi (RRL)–Rapid Research …, 2013 - Wiley Online Library
GaN nanowires, also called nanocolumns, have emerged over the last decade as promising
nanosized building blocks for a wide variety of optoelectronic devices. In contrast to other III …

Si donor incorporation in GaN nanowires

Z Fang, E Robin, E Rozas-Jiménez, A Cros… - Nano …, 2015 - ACS Publications
With increasing interest in GaN based devices, the control and evaluation of doping are
becoming more and more important. We have studied the structural and electrical properties …

III-nitride nanowires for solar light harvesting: A review

U Chatterjee, JH Park, DY Um, CR Lee - Renewable and Sustainable …, 2017 - Elsevier
The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …