A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy.

[图书][B] Photoluminescence properties of erbium-doped III-V semiconductors

TD Culp - 1998 - search.proquest.com
The photoluminescence properties of erbium doped GaAs and GaP epitaxial layers grown
by metal-organic vapor phase epitaxy (MOVPE) were investigated. Rare-earth doped …
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