The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …

The band-edge effective mass for conduction electrons in Ga., In 1 _ x Asy P 1 _ y has been
determined for several different alloy compositions covering the complete range of alloys …

Abstract Layers of InGaAsP/(100) InP covering the full wavelength range from 0.92 to 1.65
μm were grown by liquid phase epitaxy at 630° C from two-phase solutions and at 600° C …

В книге с позиции теории регулярных растворов и модели диффузионного
массопереноса рассмотрены особенности жидкофазовой эпитаксии твердых …

The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

The bandgap energy of InGaAsP quaternary alloy lattice-matched to InP has been precisely
determined by electroreflectance (ER) measurements. The ER spectra show the typical low …

Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a
constant temperature using the diffusion-limited step-cooling growth technique, and in …

Heterostructure avalanche photodiodes have been successfully fabricated in several III-V
alloy systems: GaAlAs/GaAs, GaAlSb/GaSb, GaAlAsSb/GaAlSb, and InGaAsP/InP. These …

GaAlAsSb quaternary alloys and GaAlSb ternary alloys have been grown by liquid phase
epitaxy (LPE) at 550° C and 450° C, respectively. The material compositions and epitaxial …

InGaAsP photodiodes are finding wide applications in long wavelength fiber-optical
communication systems. Particular requirements that these detectors must satisfy include …