The dependence of substrate temperatures (50 to− 20° C) on etch rate in two kinds of
PECVD SiN films were investigated by a CF 4/H 2 mixture plasma. The XRR and XPS …

The etch characteristics of SiN films using CF4/H2 and HF/H2 plasmas were investigated in
a dual-frequency capacitively coupled plasma reactor with increasing an H2 percentage …

The atomic layer etching (ALE) of silicon nitride (SiN) via a hydrogen plasma followed by
exposure to fluorine radicals was investigated by using in situ spectroscopic ellipsometry …

The effects of substrate temperature (T s) on the etch rate (ER) of the PECVD-prepared SiN,
SiO 2 and amorphous carbon (aC) films, and their selectivity were investigated with a CF 4/H …

The dependences of etching characteristics on substrate temperature (Ts, from–20 to 50° C)
of the plasma‐enhanced chemical vapor deposition (PECVD) SiN films (PE‐SiN) and low …

This article first presents quasi-in situ XPS measurements on Si 3 N 4 and a-Si samples after
exposure to an SiF 4/O 2 plasma at different cryogenic temperatures. A different behavior is …

The plasma–surface interface has sparked interest due to its potential of creating alternative
reaction pathways not available in typical gas–surface reactions. Currently, there are a …

We report the etching mechanism of amorphous hydrogenated silicon nitride by hydrogen
fluoride (HF) gas using density functional theory (DFT) calculations. Since silicon nitride …

Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a
oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory …

Résumé Les semiconducteurs à large bande interdite III-N sont des matériaux
exceptionnels de par leurs propriétés physico-chimiques. Ils constituent une solution pour …