The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic
materials has driven significant research activity, with the goal of realizing their …

The past decade has witnessed dramatic progress related to various aspects of emergent
topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Since the early 1980s, most electronics have relied on the use of complementary metal–
oxide–semiconductor (CMOS) transistors. However, the principles of CMOS operation …

In recent years, the notion of'Quantum Materials' has emerged as a powerful unifying
concept across diverse fields of science and engineering, from condensed-matter and …

Although known since the late 19th century, organic–inorganic perovskites have recently
received extraordinary research community attention because of their unique physical …

Materials with a coexistence of magnetic and ferroelectric order—multiferroics—provide an
efficient route for the control of magnetism by electric fields. The study of multiferroics dates …

Spintronic devices use spin instead of charge to process information and are widely
considered as promising candidates for next-generation electronic devices. In past decades …

Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …

Spintronic and multiferroic systems are leading candidates for achieving attojoule-class
logic gates for computing, thereby enabling the continuation of Moore's law for transistor …