N-polar InN/In 0.61 Al 0.39 N heterostructures are grown directly on sapphire by using
metalorganic chemical vapor deposition. The thickness of Mg-doped In 0.61 Al 0.39 N is 340 …

We present a comprehensive analysis of structural and charge transport properties of high-
quality N-polar InN/In 0.57 Al 0.43 N heterostructures grown by metalorganic chemical …

InAlN as a functional inorganic material is a promising alternative to the commonly used
InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy …

The growth of the pharmaceutical industry to keep pace with the well-being of humans
worldwide has posed many challenges related to quality control. This paper reports on the …

N‐polar InN/InAlN heterostructure growth and performance are studied on‐and off‐axis
sapphire substrates misoriented toward the m or a plane by 4°. A high In molar fraction …

Metal organic chemical vapor deposition is used to grow N-polar In-rich InAlN layers directly
on on-and off-axis (misoriented by 4° towards a plane) c-plane sapphire substrates. During …

In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a
function of the ICP source powers, RF chuck powers and process pressures by using …

Metal organic chemical vapor deposition was used to grow N-polar In0. 63Al0. 37N on
sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and …

Thick InAlN layers (In-molar fraction> 0.37) on GaN buffer layers were prepared using a
close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This …

One of the obstacles in obtaining high quality and high indium-molar fraction InAl (Ga) N is
the higher vapor pressure of nitrogen over group-III elements, especially indium. In this work …