Reducing both the cost and weight of Germanium (Ge)-based devices is a key concern in extending these technologies to mainstream applications. In this framework, the porous Ge …
Abstract Porous Germanium (PGe) has emerged as a promising material for applications such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …
The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition …
In this theoretical study we investigate the electronic, optical, and photocatalytic properties of monolayer titanium dioxide (TiO2), nickel dioxide (NiO2), and germanium dioxide (GeO2) …
L Vaure, Y Liu, D Cadavid, F Agnese… - …, 2018 - Wiley Online Library
In the search for low‐cost thermoelectric materials operating near room temperature, the potential of chalcopyrite (CuFeS2) nanocrystals is explored. Their colloidal synthesis is …
The interface-dependent electronic, vibrational, piezoelectric, and optical properties of van der Waals heterobilayers, formed by buckled GeO (b-GeO) and Janus MoSO structures, are …
Recently, the need of improvement of energy storage has led to the development of Lithium batteries with porous materials as electrodes. Porous Germanium (pGe) has shown promise …
Porous germanium (PGe) substrates have recently attracted significant attention for the development of lightweight and flexible solar cells and optoelectronic devices. A reliable …
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …