We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in
a room-temperature optical pump-terahertz probe experiment sensitive to the population …

We report on the analysis of thermally-limited operation of quantum-dot infrared
photodetectors (QDIPs). A device model is developed and used to calculate the QDIP …

By utilizing the tight-binding method, the electronic spectrum and states distribution of
square Janus monolayer black arsenic phosphorus (b-AsP) quantum dots (QDs) in the …

Throughout this work, we aim to explore the linear optical properties of a semiconductor
multi-shell spherical quantum dot with and without a hydrogenic donor impurity. The core …

This book is devoted to fast the evolving field of modern material science and
nanoelectronics, and more particularly to physics and technology of functional …

Based on analytic formulas and numerical simulations, we propose a plasmonic cavity with
a top Au grating and bottom Au film to enhance quantum-well infrared photodetectors …

Semiconductor self-assembled quantum dots are potential candidates to develop a new
class of midinfrared quantum photodetectors and focal plane arrays. In this article, we …

The interaction between point defects in the matrix and excitons localized in self-organized
InGaAs/GaAs quantum dots is investigated for structures irradiated by protons. The exciton …

Normal incidence InAs/In 0.15 Ga 0.85 As dots-in-a-well (DWELL) detectors are reported in
which the peak operating wavelength was tailored from 7.2 to 11 μm using heterostructure …

We have investigated the intermixing effect of multilayer self-assembled InAs/GaAs quantum
dots on photoluminescence (PL) spectra. Proton implantation combined with rapid thermal …