A novel high-performance CMOS VCRO based on electrically doped nanowire FETs in 10 nm node
In this paper, the idea of electrically doped (ED) Nano-scale TFETs is used to design a non-
tunneling n-type NWFET with an additional gate named the side-gate (SG). The work …
tunneling n-type NWFET with an additional gate named the side-gate (SG). The work …
CMOS ring oscillators based on doping-modified nanowire FETs: a novel design strategy
We present a new Step Doped Drain and Source Nanowire FET (NWFET) using doping
profile engineering to modify the energy band diagram. This transistor exhibits improved …
profile engineering to modify the energy band diagram. This transistor exhibits improved …
Performance study of wide tuning range and low phase noise differential ring voltage control oscillators (DRVCO) for wireless communications
VV Nandini, S Suman - Journal of Physics: Conference Series, 2023 - iopscience.iop.org
This article mostly emphasize on the study and characterization of CMOS differential ring
voltage control oscillator (DRVCO). There are numerous DRVCO with various kinds of delay …
voltage control oscillator (DRVCO). There are numerous DRVCO with various kinds of delay …