Photo-induced current transient spectroscopic study of the traps in CdTe
X Mathew - Solar energy materials and solar cells, 2003 - Elsevier
Photo-induced current transient spectroscopy is an efficient technique for the detection and
identification of traps in semiconductors. This technique has been used to determine the …
identification of traps in semiconductors. This technique has been used to determine the …
State of the art and prospects of photorefractive CdTe
Y Marfaing - Journal of crystal growth, 1999 - Elsevier
The photorefractive properties of CdTe and CdZnTe alloys are reviewed. Firstly, the energy
level spectrum of the deep centre vanadium is analyzed from the data brought about by …
level spectrum of the deep centre vanadium is analyzed from the data brought about by …
Properties of Cd1− xZnxTe crystals grown by high pressure Bridgman for nuclear detection
P Fougeres, M Hage-Ali, JM Koebel, P Siffert… - Journal of crystal …, 1998 - Elsevier
CdxZn1− xTe crystals grown by high-pressure Bridgman are promising for nuclear detection
and are already widely used and studied for this application. Phase precipitation is identified …
and are already widely used and studied for this application. Phase precipitation is identified …
A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: the case of the tellurium antisite
D Verstraeten, C Longeaud… - Semiconductor …, 2003 - iopscience.iop.org
The electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped
CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed …
CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed …
Electrical and optical characteristics of deep levels in vanadium-doped Cd0. 96Zn0. 04Te materials by photoinduced current, capacitance, and photocapacitance …
A Zerrai, G Marrakchi, G Bremond - Journal of Applied Physics, 2000 - pubs.aip.org
Among III–V and II–VI bulk semiconductor materials, currently being studied for their
photorefractive PR properties, CdTe has been demonstrated to be very promising for …
photorefractive PR properties, CdTe has been demonstrated to be very promising for …
[HTML][HTML] Solubility limits of vanadium in CdTe and (Cd, Mn) Te crystals
R Jakieła, A Mycielski, DM Kochanowska… - Journal of Crystal …, 2021 - Elsevier
The aim of this study is to establish the measured concentration of vanadium actually
present in the doped crystals as a function of the vanadium concentration determined on the …
present in the doped crystals as a function of the vanadium concentration determined on the …
Investigating the structural, electronic, and magnetic properties of Cd1–xVxTe: insights from first-principles calculations
In our study, we aim to investigate the structural, electronic, and magnetic properties of Cd 1–
x V x Te, a diluted magnetic semiconductor with a Cadmium Telluride (CdTe) structure. To …
x V x Te, a diluted magnetic semiconductor with a Cadmium Telluride (CdTe) structure. To …
Properties of Cd1-xZnx Te crystals grown by High Pressure Bridgman (HPB)
A Drighil, R Adhiri, C Sribi, M Mousstad… - Moroccan Journal of …, 1999 - revues.imist.ma
In this paper we present results of a modelling of the current-voltage characteristics of
metal/ultra-thin oxide/semiconductor structures with negatively biased metal gate (V< 0) …
metal/ultra-thin oxide/semiconductor structures with negatively biased metal gate (V< 0) …
Investigation of deep levels in vanadium-doped CdTe and CdZnTe
Deep levels in vanadium-doped CdTe and CdZnTe crystals grown by vertical Bridgman for
photorefractive applications are reviewed. Based on photo-induced current transient …
photorefractive applications are reviewed. Based on photo-induced current transient …
[PDF][PDF] Präparation und Charakterisierung von Dünnschichtmaterialsystemen für die Rückkontaktbildung bei polykristallinen CdTe-Dünnschichtsolarzellen
D Kraft - 2004 - tuprints.ulb.tu-darmstadt.de
Die polykristalline CdTe-Dünnschichtsolarzelle ist infolge des enormen
Kostenreduktionspotenzials auf dem Sprung zur ökonomischen Konkurrenzfähigkeit. Die …
Kostenreduktionspotenzials auf dem Sprung zur ökonomischen Konkurrenzfähigkeit. Die …