Broadband, linear, and high-efficiency mm-Wave PAs in silicon―overcoming device limitations by architecture/circuit innovations
Mm-Wave 5G links and many emerging mission-critical DoD applications have recently
stimulated major research efforts on next-generation mm-Wave power amplifiers (PAs) to …
stimulated major research efforts on next-generation mm-Wave power amplifiers (PAs) to …
A 19.1-46.5 GHz Broadband Efficient Power Amplifier in 22nm CMOS FD-SOI for mm-Wave 5G
In this paper, we discuss the design and measurement results of a very broadband and
efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm …
efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm …
A 28-GHz 16-Gb/s high efficiency 16-QAM transmitter in 65-nm CMOS
This work presents the design and implementation of an ultra-broadband quadrature
common-mode amplitude modulator (QCAM) to generate high power back-off efficiency 16 …
common-mode amplitude modulator (QCAM) to generate high power back-off efficiency 16 …
Energy-efficient power amplifiers and linearization techniques for massive MIMO transmitters: a review
Highly efficient power amplifiers (PAs) and associated linearization techniques have been
developed to accommodate the explosive growth in the data transmission rate and …
developed to accommodate the explosive growth in the data transmission rate and …
A -Band Dual-Mode Power Amplifier in 65-nm CMOS Technology
SH Chang, CN Chen, H Wang - IEEE Microwave and Wireless …, 2018 - ieeexplore.ieee.org
In this letter, a Ka-band dual-mode power amplifier with a new topology is fabricated in 65-
nm standard CMOS. The PA with the switched capacitor to modulate the output impedance …
nm standard CMOS. The PA with the switched capacitor to modulate the output impedance …
Efficient multiband channel reconstruction and tracking for hybrid mmWave MIMO systems
Multiband operation in millimeter wave (mmWave) will obtain lots of performance gain by
offering larger bandwidth. However, the prerequisite is the acquisition of accurate channel …
offering larger bandwidth. However, the prerequisite is the acquisition of accurate channel …
Broadband millimeter-wave 5G power amplifier design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT
J Mayeda, DYC Lie, J Lopez - Electronics, 2022 - mdpi.com
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …
Neural-Network-Based Automated Synthesis of Transformer Matching Circuits for RF Amplifier Design
Rich experience and intuition play important roles in designing planar transformers (TFs) for
contemporary radio frequency integrated circuits (RFICs). In general, RFIC designers have …
contemporary radio frequency integrated circuits (RFICs). In general, RFIC designers have …
5G mm-wave stacked class AB power amplifier in 45 nm PD-SOI CMOS
R Ciocoveanu, R Weigel, A Hagelauer… - 2018 Asia-Pacific …, 2018 - ieeexplore.ieee.org
This paper presents a single-stage stacked Class AB power amplifier (PA) with lower
complexity for fifth-generation (5G) K/K a band front-ends that has been realized in a 45 nm …
complexity for fifth-generation (5G) K/K a band front-ends that has been realized in a 45 nm …
A compact 39-GHz 17.2-dBm power amplifier for 5G communication in 65-nm CMOS
This paper presents design of a 39-GHz power amplifier for fifth-generation (5G) mobile
communication in millimeter-wave. The power amplifier consists of two differential capacitive …
communication in millimeter-wave. The power amplifier consists of two differential capacitive …