Discovery of new transport phenomena and invention of electron devices through
exploitation of these phenomena have caused a great deal of interest in the properties of …

Epitaxial layers of the topological insulator Bi 2 Se 3 have been grown by molecular beam
epitaxy on laterally lattice-matched InP (111) B substrates. High resolution X-ray diffraction …

The band structures of Ge, Si, GaAs, GaP, GaSb, InAs, InP, InSb, and AlSb have been
studied in reflectivity in the energy region 1.6-5.0 eV at temperatures ranging from 80 to 300 …

Recent advances in the field of modulation spectroscopy are discussed. Optical spectra
obtained by means of electric field, stress, temperature, wavelength, incident light, and other …

The wavelength-modulated absorption and reflection spectra of SrTi O 3 have been
measured as functions of temperature. Over a 60-K temperature range around the structural …

Using the technique of energy-distribution analysis of photoemitted electrons, we have
accurately located the position of several band-structure features of InP, including the next …

The band offsets at polar heterointerfaces that consist of group III-V zinc-blende
semiconductors are investigated by first-principles modeling using the Heyd-Scuseria …

We report electroreflectance spectra for the chalcopyrite crystal CdSn P 2, the ternary analog
of InP. Structure in the electroreflectance spectra is observed at 1.17, 1.25, and 1.33 eV due …

During the MURI performance period we completed a diverse portfolio of world-class
research projects. We made remarkable progress in all major topics encompassed by the …

In the current study, whether femtosecond laser and electron beam irradiation of indium
phosphide (InP) are “green,” fast, and effective methods to produce metallic In nanoparticles …